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The BC846PN-AQ is a dual complementary NPN+PNP bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is housed in an SOT-363 surface-mount package and designed for general-purpose signal processing, switching, and amplification applications. The device features a maximum collector current of 100 mA and a power dissipation rating of 250 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 450, a collector-emitter voltage (VCEO) of 65 V, and a transition frequency (fT) of 100 MHz. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific AEC-Q101 qualification status directly with Diotec Semiconductor or authorized distributors before procurement. The datasheet indicates that the -AQ suffix denotes components currently undergoing AEC-Q101 qualification rather than fully certified automotive-grade parts. Confirm compliance requirements against project specifications prior to ordering.
Select this component when a compact dual complementary transistor solution is required for low-power general-purpose tasks. Ensure the design accommodates the 250 mW power dissipation limit and verify thermal management strategies for high ambient temperatures. Consider the 100 mA continuous collector current capability and the 65 V breakdown voltage for circuit protection margins.
The BC846PN-AQ belongs to the BC846PN series of SMD general-purpose transistors produced by Diotec Semiconductor. This series provides a cost-effective alternative to discrete transistor pairs by integrating both NPN and PNP devices into one footprint. The product line targets standard commercial and industrial electronics requiring reliable small-signal performance.
Publicly confirmed substitute part numbers are not available in the provided documentation.