BC846PNE6327BTSA1

BC846PNE6327BTSA1

  • Description:TRANS NPN/PNP 65V PG-SOT363-PO
  • Series:-

SKU:e2551679cb80 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN/PNP 65V PG-SOT363-PO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:-
  • Qualification:-

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BC846PNE6327BTSA1

Overview

The BC846PNE6327BTSA1 is a dual NPN/Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device features a dual configuration with a maximum DC collector current of 100 mA. Key electrical parameters include a Collector-Emitter Voltage (VCEO) of 65 V, a Collector-Base Voltage (VCBO) of 80 V, and an Emitter-Base Voltage (VEBO) of 6 V. Power dissipation is rated at 250 mW, with a gain-bandwidth product (fT) of 250 MHz. The component operates within a temperature range of -65 °C to +150 °C.

Feature Summary

  • Dual NPN transistor configuration for space-efficient circuit designs
  • High thermal stability supporting operation up to 150 °C
  • Silicon-based construction ensuring reliable switching performance

Applications

  • General-purpose signal amplification
  • Switching applications in consumer electronics
  • Interface circuits requiring compact dual-transistor solutions

Procurement Notes

Verify the specific suffix 'B' against official Infineon documentation to confirm binning or tolerance variations. Ensure the SOT-363-6 footprint matches the target PCB layout. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN BJT is required in a minimal SOT-363-6 footprint. Consider the 100 mA continuous collector current limit and 250 mW power dissipation rating for thermal management. Verify that the 65 V VCEO rating meets the circuit's voltage requirements.

Part Context

This part belongs to the BC846 series of small-signal transistors from Infineon. The BC846 family is widely recognized for general-purpose use. The 'P' designation typically indicates a dual configuration, while the 'E6327' suffix relates to the specific packaging and tape-and-reel format used for automated assembly.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers offering dual NPN BJTs in SOT-363 packages only after verifying pinout compatibility and electrical parameter equivalence.

BC846PNE6327BTSA1BC846PNE6327BTSA1

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