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The BC846PNE6327BTSA1 is a dual NPN/Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device features a dual configuration with a maximum DC collector current of 100 mA. Key electrical parameters include a Collector-Emitter Voltage (VCEO) of 65 V, a Collector-Base Voltage (VCBO) of 80 V, and an Emitter-Base Voltage (VEBO) of 6 V. Power dissipation is rated at 250 mW, with a gain-bandwidth product (fT) of 250 MHz. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix 'B' against official Infineon documentation to confirm binning or tolerance variations. Ensure the SOT-363-6 footprint matches the target PCB layout. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement specifications.
Select this component when a dual NPN BJT is required in a minimal SOT-363-6 footprint. Consider the 100 mA continuous collector current limit and 250 mW power dissipation rating for thermal management. Verify that the 65 V VCEO rating meets the circuit's voltage requirements.
This part belongs to the BC846 series of small-signal transistors from Infineon. The BC846 family is widely recognized for general-purpose use. The 'P' designation typically indicates a dual configuration, while the 'E6327' suffix relates to the specific packaging and tape-and-reel format used for automated assembly.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers offering dual NPN BJTs in SOT-363 packages only after verifying pinout compatibility and electrical parameter equivalence.