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The BC846UE6327 is a dual NPN silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package containing two galvanically isolated transistors. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a maximum DC collector current of 100 mA with a total power dissipation of 250 mW. It features a gain-bandwidth product (fT) of 250 MHz and a collector-emitter saturation voltage of 200 mV. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix E6327 against the manufacturer's current datasheet to confirm availability and exact pinout compatibility. Check for alternative suffixes such as HTSA1 if the primary part is discontinued. Ensure that the SC-74-6 footprint matches the target PCB design before finalizing procurement decisions.
Select this component when a dual NPN configuration is required in a space-constrained SMD application. The 65 V rating and 100 mA current capacity make it suitable for low-power signal processing. Compare fT and saturation voltage requirements against similar BC846 series variants to ensure optimal performance for the specific circuit topology.
This part belongs to the BC846 series of small-signal NPN transistors. It shares functional similarities with the BC846S and BC847U variants but differs in package type and specific voltage ratings. The BC846U typically denotes the standard version within this family, optimized for general-purpose use in consumer and industrial electronics.
Publicly confirmed substitute part numbers include BC846UE6327HTSA1 and SP000012619. Verify pin compatibility and electrical specifications before substituting.