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The BC847A,235 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum DC collector current of 100 mA and withstands a collector-emitter voltage of 65 V. Key electrical limits include a collector-base voltage of 80 V and an emitter-base voltage of 6 V. The component features a collector-emitter saturation voltage of 200 mV, a power dissipation rating of 250 mW, and a gain-bandwidth product of 100 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm package type and gain binning. Ensure compatibility with RoHS directives and check for any recent production change notices that may affect assembly parameters or material composition prior to final design approval.
Select this component for designs requiring a standard NPN transistor with high voltage tolerance relative to its small form factor. The availability of multiple gain selections allows for optimized performance in linear applications without requiring custom sorting. Consider thermal management requirements given the 250 mW power dissipation limit in the compact SOT-23 package.
This part belongs to the BC847 series of general-purpose NPN transistors from Nexperia. The series offers various gain grades and packaging options to suit different volume and space constraints. The BC847A variant specifically targets applications requiring higher current gain compared to baseline versions, providing flexibility in biasing network design.
BC847AW,115
The maximum collector-emitter voltage (VCEO) is 65 V.
Yes, the BC847A,235 is qualified according to AEC-Q101 and is recommended for use in automotive applications.
The gain-bandwidth product (fT) is 100 MHz.