BC847AMB,315

Overview

The BC847AMB,315 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SMD/SMT DFN-1006B-3 package (SOT-883B/XQFN3). Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (Vceo) of 45 V, and a collector-base voltage (Vcbo) of 50 V. The device features a maximum emitter-base voltage (Vebo) of 6 V, a power dissipation (Pd) of 250 mW, and a gain-bandwidth product (Ft) of 100 MHz.

Feature Summary

• Single NPN configuration for discrete signal amplification
• Small footprint surface-mount design for space-constrained PCBs
• Silicon-based construction for reliable switching performance

Applications

• General-purpose signal amplification circuits
• Switching applications in consumer electronics
• Interface circuits requiring low-power NPN control

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component when a compact NPN switch or amplifier is required with moderate voltage ratings. Compare against other BC847 variants based on hFE binning requirements and thermal constraints. Ensure the DFN-1006B-3 package fits the board layout and that the 250 mW power dissipation rating meets the application's thermal management needs.

Part Context

This part belongs to the Nexperia BC847 series, a widely used family of small-signal NPN transistors. The BC847AMB variant specifically denotes a particular gain classification within the series, packaged in the ultra-small DFN-1006B-3 form factor. This series is standard for general-purpose electronic designs requiring reliable NPN functionality in minimal space.

Replacement Considerations

Check for direct equivalents such as BC847A,315 or BC847AW,115 if pinout and package compatibility are maintained. Verify that substitute parts meet the same 45V Vceo and 100mA Ic specifications. Confirm that the replacement's hFE range matches the circuit's biasing requirements.