BC847AMTF

Overview

The BC847AMTF is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum DC collector current of 100 mA with a power dissipation rating of 310 mW. Electrical characteristics include a DC current gain (hFE) range of 110 to 220 for the 'A' classification, a transition frequency (fT) of 300 MHz, and a base-emitter saturation voltage of 900 mV at high currents.

Feature Summary

• Designed for switching and amplifier applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low noise performance characteristics

Applications

• Switching circuits
• Amplifier stages
• Thick and thin-film circuit integration

Procurement Notes

Verify the specific hFE binning suffix ('A', 'B', or 'C') required for your design, as it dictates the current gain range. Confirm that the tape and reel packing method aligns with your automated assembly equipment specifications. Ensure the component's absolute maximum ratings are not exceeded during operation to maintain reliability.

Selection Notes

Select this part when a general-purpose NPN transistor with a 45 V collector-emitter voltage rating is needed. The 'A' suffix indicates a lower gain band (110–220), suitable for stable biasing requirements. Consider the SOT-23 package constraints regarding thermal resistance and power dissipation limits in your layout.

Part Context

This component belongs to the BC846/BC847/BC848/BC850 family of NPN epitaxial silicon transistors. The BC847 variant specifically offers a 45 V VCEO rating, distinguishing it from the higher-voltage BC846 and lower-voltage BC848 models within the same series.

Replacement Considerations

Direct substitutes include BC847ALT1G and BC847BMTF from onsemi. Cross-manufacturer equivalents such as Nexperia BC847A/SNR may be considered if pinout and electrical parameters match.