SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847AMTF is a single NPN general-purpose bipolar junction transistor manufactured by onsemi. It utilizes silicon epitaxial planar technology and is housed in an SOT-23 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical characteristics include a minimum DC current gain (hFE) of 640, a transition frequency of 300 MHz, and a power dissipation rating of 310 mW. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'A' against official onsemi documentation to confirm the high-gain binning classification. Confirm RoHS compliance status and lead-free packaging details via the manufacturer's datasheet. Ensure the component matches the required SOT-23 pinout configuration for your PCB layout.
Select this component when a standard NPN transistor requires significantly higher current gain than typical variants. The BC847A series offers superior amplification capabilities compared to lower gain grades. Verify that the 100 mA current limit and 45 V voltage rating align with the circuit's operational requirements.
This part belongs to the BC847 family of NPN general-purpose transistors from onsemi. It serves as a high-gain variant within the series, complemented by the PNP BC857A. The component is designed for small-signal applications where compact size and reliable amplification are prioritized over high-power handling.
Compatible substitutes include BC847A from other manufacturers such as Nexperia or Diodes Inc., provided they meet the same SOT-23 package and electrical specifications.