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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC847AQ-7-F is a general-purpose NPN bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. Key electrical specifications include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 45 V, and a collector-base voltage (VCBO) of 50 V. The device features an emitter-base voltage (VEBO) of 6 V, a collector-emitter saturation voltage of 200 mV, and a power dissipation rating of 310 mW. Its gain-bandwidth product (fT) is 300 MHz, with an operating temperature range from -65°C to +150°C.
Feature Summary
- Single NPN configuration within an ultra-small surface-mount package for compact circuit designs.
- Epitaxial die construction ensuring high reliability and consistent performance characteristics.
- Qualified to AEC-Q101 standards, making it suitable for demanding automotive applications.
Applications
- Medium power amplification circuits
- General switching applications
- Automotive electronic systems
Procurement Notes
Verify the specific suffix 'A' against official Diodes Incorporated documentation to confirm the intended hFE binning or grade, as this distinguishes it from standard variants. Ensure the ordering quantity aligns with the manufacturer's tape-and-reel packaging requirements. Cross-reference the RoHS compliance status directly with the latest datasheet to meet environmental regulations. Confirm that the SOT-23 package dimensions match the target PCB footprint constraints before finalizing procurement.
Selection Notes
Select this component when a single NPN transistor with high gain and automotive qualification is required. The BC847AQ-7-F offers a balance of low saturation voltage and high frequency response suitable for signal processing. Consider the 310 mW power dissipation limit when designing thermal management solutions. Compare the 300 MHz transition frequency against application bandwidth needs to ensure adequate signal integrity without excessive noise.
Part Context
This part belongs to the BC847 series of small-signal transistors produced by Diodes Incorporated. The series includes various configurations such as dual complementary pairs and different gain grades. The BC847AQ-7-F specifically denotes a single NPN unit with automotive-grade reliability. It shares the fundamental electrical architecture with other BC847 variants but differs in packaging and specific performance binning defined by the manufacturer.
Replacement Considerations
- BC847C-7-F
- BC847B-7-F
FAQ
What is the maximum collector-emitter voltage for the BC847AQ-7-F?
The maximum collector-emitter voltage (VCEO) is 45 V.
Is the BC847AQ-7-F qualified for automotive use?
Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.
What is the gain-bandwidth product of this transistor?
The gain-bandwidth product (fT) is 300 MHz.
