SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847AQBZ is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a DFN1110D-3 (SOT8015) surface-mount package. Key electrical parameters include a maximum DC collector current of 200 mA, a collector-emitter voltage (Vceo) of 45 V, and a collector-base voltage (Vcbo) of 50 V. The device features an emitter-base voltage (Vebo) of 6 V, a power dissipation (Pd) of 200 mW, and a collector-emitter saturation voltage of 400 mV.
Verify the specific ordering code against official Nexperia documentation to ensure correct gain binning and automotive qualification status. Confirm package dimensions match the DFN1110D-3 specification during PCB layout. Request the latest datasheet revision to validate thermal characteristics and reliability data before finalizing component selection.
Select this component when a high-gain NPN transistor with automotive reliability is required in a minimal footprint. The DFN1110D-3 package offers superior thermal performance compared to traditional SOT packages. Ensure the design accounts for the 200 mA current limit and 45 V voltage rating under all operating conditions.
This part belongs to the BC847 series of general-purpose NPN transistors. The 'Q' indicates AEC-Q101 automotive qualification, while 'B' denotes the specific gain group. The 'Z' suffix typically refers to tape-and-reel packaging. It serves as a robust alternative to standard commercial-grade devices in demanding environments.
Direct substitutes include other AEC-Q101 qualified NPN transistors in the DFN1110D-3 package with matching 45V/200mA ratings. Verify pinout compatibility and hFE range overlap with the original BC847A specifications.