BC847AT-7

BC847AT-7

$0.10
  • Description:TRANS NPN 45V 0.1A SOT-523
  • Series:-

SKU:47ab228d19b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A SOT-523
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523
  • Grade:-
  • Qualification:-

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BC847AT-7

Overview

The BC847AT-7-F is a single NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features epitaxial planar die construction and supports a collector current of 100 mA with a collector-emitter breakdown voltage (BVCEO) of 45 V. The device offers a DC current gain (hFE) range of 110 to 290 at IC = 2 mA and VCE = 5 V. Electrical characteristics include a collector-base breakdown voltage of 50 V, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 150 mW. Operating temperatures span from -55°C to +150°C.

Feature Summary

  • Utilizes epitaxial planar die construction for reliable performance.
  • Designed in an ultra-small SOT523 surface-mount package.
  • Compliant with RoHS standards and free of halogens and antimony.

Applications

  • General-purpose switching applications
  • RF amplifier circuits
  • Low-power signal processing

Procurement Notes

Verify the specific ordering suffix '-7-F' to confirm reel packaging quantities and tape width specifications. Ensure that the selected component matches the required hFE binning class 'A' for the intended circuit design. Confirm compliance with local environmental regulations regarding lead-free and halogen-free requirements before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN transistor with moderate gain and low power dissipation is required. The BC847AT variant provides a lower minimum hFE compared to BT or CT versions, suitable for standard amplification tasks. Consider the SOT523 footprint constraints and thermal resistance limits during PCB layout planning.

Part Context

This part belongs to the BC847 series of NPN small signal transistors produced by Diodes Incorporated. It serves as the 'A' gain-bin version within the SOT523 package family, complemented by higher gain variants like BC847BT and BC847CT. The series is designed for general-purpose use in portable and space-constrained electronic devices.

Replacement Considerations

BC847BT-7-F

FAQ

What is the marking code for the BC847AT-7-F?

The marking code for the BC847AT-7-F is '1E'.

What is the maximum collector-base voltage for this device?

The maximum collector-base voltage (VCBO) is 50 V.

Is there a complementary PNP type available?

Yes, the MMBT3906T is listed as the complementary PNP type.

BC847AT-7BC847AT-7
$0.10
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