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The BC847AT-7-F is a single NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features epitaxial planar die construction and supports a collector current of 100 mA with a collector-emitter breakdown voltage (BVCEO) of 45 V. The device offers a DC current gain (hFE) range of 110 to 290 at IC = 2 mA and VCE = 5 V. Electrical characteristics include a collector-base breakdown voltage of 50 V, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 150 mW. Operating temperatures span from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' to confirm reel packaging quantities and tape width specifications. Ensure that the selected component matches the required hFE binning class 'A' for the intended circuit design. Confirm compliance with local environmental regulations regarding lead-free and halogen-free requirements before finalizing procurement orders.
Select this component when a compact NPN transistor with moderate gain and low power dissipation is required. The BC847AT variant provides a lower minimum hFE compared to BT or CT versions, suitable for standard amplification tasks. Consider the SOT523 footprint constraints and thermal resistance limits during PCB layout planning.
This part belongs to the BC847 series of NPN small signal transistors produced by Diodes Incorporated. It serves as the 'A' gain-bin version within the SOT523 package family, complemented by higher gain variants like BC847BT and BC847CT. The series is designed for general-purpose use in portable and space-constrained electronic devices.
BC847BT-7-F
The marking code for the BC847AT-7-F is '1E'.
The maximum collector-base voltage (VCBO) is 50 V.
Yes, the MMBT3906T is listed as the complementary PNP type.