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The Diotec Semiconductor BC847AW is an NPN general-purpose transistor housed in a SOT-323 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current (IC) of 100 mA. The device offers three distinct DC current gain (hFE) groups: Group A (110–220), Group B (200–450), and Group C (420–800). Power dissipation is rated at 200 mW, with a junction temperature range spanning from -55°C to +150°C.
Verify the specific suffix against official documentation to confirm the exact electrical characteristics and qualification grade. The absence of a suffix indicates industrial grade, while other suffixes denote commercial or automotive standards. Ensure the ordering code matches the required hFE group and compliance specifications before procurement.
Select this component based on the required collector-emitter voltage rating of 45 V and the specific DC current gain group needed for the circuit design. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures. Verify that the SOT-323 package dimensions fit the available PCB space.
This part belongs to the BC846W through BC849CW series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The series utilizes an epitaxial silicon planar design optimized for low-power surface-mount applications. The BC847AW variant specifically targets designs requiring a 45 V breakdown voltage within the standard small-signal transistor family.
BC847BW-AQ
The BC847AW is available in three current gain groups: Group A (110 to 220), Group B (200 to 450), and Group C (420 to 800).
The maximum collector-emitter voltage (VCEO) for the BC847AW is 45 V.
Yes, the BC847AW is compliant with RoHS (without exemption), REACH, and Conflict Minerals regulations.