SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847AW-TP is a single NPN silicon bipolar junction transistor manufactured by Micro Commercial Components. It is housed in an SOT-323-3 surface-mount package. The device supports a maximum continuous collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 6 V, and a DC current gain (hFE) minimum of 90. Power dissipation is rated at 200 mW with a transition frequency (fT) of 100 MHz. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix AW against the manufacturer's datasheet to confirm the hFE binning grade. Ensure the ordering code matches the required tape-and-reel or cut-tape format. Confirm RoHS compliance status directly from the latest production documentation before finalizing procurement specifications.
Select this component when a small-form-factor NPN transistor is required for low-current applications. The 45V rating suits general logic-level switching. Compare the 90 minimum hFE against designs requiring higher gain, such as the BC847BW-TP variant, if signal amplification efficiency is critical.
This part belongs to the BC847 series of small-signal NPN transistors. It shares the same physical footprint as other variants like BC847A-TP but differs in electrical characteristics, specifically the current gain classification. The BC847AW-TP is designed for cost-effective mass production in consumer electronics.
BC847A-TP offers similar voltage ratings but may differ in gain distribution. BC847BS-TP provides dual NPN configuration in SOT-363. Verify pinout compatibility and thermal limits before substituting.