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The BC847B is a general-purpose NPN bipolar junction transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device dissipates up to 250 mW of power and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) minimum of 200 at 2 mA and 5 V, and a transition frequency of 100 MHz. It is housed in an SOT-23 surface-mount package.
Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. against the component marking. Confirm the SOT-23 package type and RoHS compliance status. Ensure the specific hFE binning matches circuit requirements. Check for any specific handling instructions regarding moisture sensitivity level 1.
Select this component for low-power NPN switching or linear amplification tasks requiring moderate voltage ratings. The 45 V breakdown voltage suits standard low-voltage logic interfaces. Verify that the 100 mA current limit meets load demands. Consider the thermal dissipation capabilities in enclosed designs.
This part belongs to the BC847 series of small-signal transistors. It serves as a complement to the PNP BC857B variant. The device is designed for general electronic applications where reliable amplification and switching are required. It represents a standard discrete semiconductor solution for consumer and industrial electronics.
The maximum collector-emitter voltage (VCEO) is 45 V.
The minimum DC current gain (hFE) is 200 when measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
The component is available in the SOT-23 surface-mount package.