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The BC847B/DG/B3,215 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-363 (SC-88) surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage rating of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 250 mW. The component offers a transition frequency of 100 MHz and a minimum DC current gain of 200 at 2 mA and 5 V.
Verify the specific suffix DG/B3 against official Nexperia documentation to confirm the exact tape-and-reel packaging configuration and binning requirements. Ensure the ordering part number matches the intended SOT-363 variant specifications before finalizing procurement orders.
Select this component for designs requiring a compact NPN transistor with moderate voltage ratings. The SOT-363 package is suitable for high-density PCB layouts. Confirm that the 100 mA current limit and 250 mW thermal dissipation constraints align with the target application's operational envelope.
This part belongs to the BC847 series of general-purpose NPN transistors from Nexperia. The series includes variants with different gain ranges (A, B, C) and configurations. The BC847B specifically denotes a standard gain selection within this family, designed for cost-effective mass production in consumer and industrial electronics.
Direct substitutes include other BC847B variants in the SOT-363 package from Nexperia or equivalent general-purpose NPN transistors from other manufacturers, provided pinout compatibility and electrical ratings are verified.