BC847B/DG/B4R

Overview

The BC847B/DG/B4R is a single NPN silicon bipolar junction transistor manufactured by Nexperia. It features a maximum collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device provides a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a transition frequency (fT) of 100 MHz. Power dissipation is rated at 250 mW. It operates within a temperature range of -65 °C to +150 °C and utilizes the SOT-23 (TO-236AB) surface-mount package.

Feature Summary

• High DC current gain for effective signal amplification
• Low saturation voltage for efficient switching operations
• Wide operating temperature range suitable for diverse environments

Applications

• General-purpose amplifier circuits
• Electronic switching applications
• Signal conditioning in consumer electronics

Procurement Notes

Verify the specific suffix 'DG/B4R' against official Nexperia documentation to confirm marking codes and tape-and-reel specifications. Ensure compatibility with standard SOT-23 footprints during procurement. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing orders.

Selection Notes

Select this component for designs requiring a general-purpose NPN transistor with moderate voltage ratings. The high hFE ensures reliable performance in low-current amplification tasks. Verify that the 250 mW power dissipation limit aligns with the thermal management capabilities of the target PCB layout.

Part Context

This part belongs to the BC847 series of small-signal NPN transistors. It is widely used in portable devices and industrial controls due to its compact SOT-23 packaging. The series offers standardized electrical characteristics across multiple manufacturers, facilitating supply chain flexibility.

Replacement Considerations

Direct substitutes include BC847B variants from other vendors such as ON Semiconductor or Infineon. Verify pinout compatibility and ensure equivalent hFE bins are selected for critical gain applications.