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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The BC847BDW1T1G is a dual NPN silicon general-purpose bipolar junction transistor manufactured by onsemi. It integrates two independent NPN transistors within a compact SOT-363 (SC-88) surface-mount package designed for low-power applications. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V, with a collector-base voltage of 50 V and an emitter-base voltage of 6 V. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V, a transition frequency (fT) of 100 MHz, and a power dissipation capability of 380 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Feature Summary
- Dual NPN configuration in a single SOT-363 package for space-efficient circuit design
- AEC-Q101 qualified for automotive and high-reliability applications requiring unique site control
- RoHS compliant and halogen-free construction
Applications
- General purpose amplifier circuits
- Switching applications in consumer electronics
- Automotive electronic systems requiring AEC-Q101 compliance
Procurement Notes
Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure authenticity. Confirm that the received components match the SOT-363 package type and meet the required AEC-Q101 qualification standards for your intended application environment.
Selection Notes
Select this component when a dual NPN topology is required in a minimal footprint. Ensure the design accommodates the 380 mW power dissipation limit and verify that the 45 V collector-emitter voltage rating exceeds the maximum operating voltage. Consider the 100 MHz transition frequency for signal processing requirements.
Part Context
This part belongs to the BC847BDW1 series of dual general-purpose transistors. It serves as a compact alternative to discrete single transistors, reducing board space. The SOT-363 package allows for automated surface-mount assembly, making it suitable for high-volume manufacturing in portable and automotive devices.
Replacement Considerations
Direct substitutes include BC846BDW1T1G for higher voltage ratings or BC847BPDW1T1G for complementary NPN/PNP pairs. Verify pinout compatibility and thermal characteristics before substitution.
