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The BC847BE6433HTMA1 is a single NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and complies with AEC-Q100 automotive qualification standards. The device supports a maximum continuous collector current of 100 mA and operates within a voltage range defined by a VCEO of 45 V, VCBO of 50 V, and VEBO of 6 V. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450, a transition frequency (fT) of 250 MHz, and a power dissipation capability of 330 mW. It functions reliably across an extended temperature range from -65°C to +150°C.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm specific manufacturing lot dates as availability may be limited. Ensure storage conditions meet semiconductor preservation standards to maintain parameter integrity prior to assembly.
Select this component when automotive qualification is mandatory for NPN switching or amplification roles. Compare against other BC847 variants if different pin configurations or gain ranges are required. Verify that the SOT-23-3 footprint aligns with existing PCB layout constraints.
This part belongs to the BC847 series of NPN silicon transistors designed for low-power applications. It shares family characteristics with other BC847 models but is distinguished by its specific gain binning and automotive certification suffix.
Check for direct cross-reference equivalents such as BC847B from other manufacturers. Verify that substitute parts match the SOT-23-3 package and AEC-Q100 requirements if automotive use is intended.