BC847BFN3_R1_00001

Overview

The BC847BFN3 is an NPN general-purpose transistor manufactured by Panjit International Inc. It utilizes a DFN1006-3L plastic package and features an epitaxial silicon planar design. The device supports a collector-emitter voltage of 45V, a continuous collector current of 100mA, and a maximum power dissipation of 250mW. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at specified test conditions, a transition frequency of 100MHz, and a thermal resistance junction-to-ambient of 500°C/W.

Feature Summary

• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard

Applications

• General purpose amplifier applications

Procurement Notes

Verify the specific ordering suffix R1_00001 against official Panjit documentation to confirm packing details. Confirm that the DFN1006-3L package matches the required footprint for the target PCB layout. Ensure compliance with the stated environmental standards if applicable to the final assembly process.

Selection Notes

Select this component for low-power signal amplification tasks requiring a compact surface-mount form factor. Evaluate the 250mW power dissipation limit relative to the expected operating temperature and board thermal conditions. Consider the 45V breakdown rating when designing circuits with higher supply voltages or transient spikes.

Part Context

This part belongs to the BC847 series of NPN general-purpose transistors. It serves as a small-signal switching and amplification device suitable for consumer electronics and industrial control boards where space efficiency is prioritized over high power handling capabilities.

Replacement Considerations

Cross-reference with other manufacturers offering the BC847B variant in a DFN1006-3L package. Verify pinout compatibility and electrical parameter tolerances before substituting.