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The BC847BFZ-7B is a single NPN small signal transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA. The device utilizes an X2-DFN0606-3 package with a power dissipation capacity of 925mW under specific thermal conditions. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 470 at 2mA, a transition frequency (fT) of 100MHz, and a collector-base cutoff current of 15nA.
Verify the ordering suffix -7B corresponds to the 10,000-unit reel quantity specified in the datasheet. Confirm the marking code '1F' matches the received components. Ensure procurement channels are authorized to maintain product integrity and traceability standards defined by the manufacturer.
Select this component when a low-profile NPN transistor with enhanced thermal performance is required. The X2-DFN0606-3 package offers significant space savings compared to traditional SOT-23 or larger DFN packages while maintaining robust power handling capabilities suitable for dense PCB layouts.
This part belongs to the BC847 series of small signal transistors produced by Diodes Incorporated. It serves as the NPN counterpart to the BC857BZ PNP device within the same family. The series is designed for general-purpose amplification and switching tasks in consumer electronics and industrial control systems requiring reliable semiconductor performance.
Direct pin-compatible replacements may include other manufacturers' parts in the X2-DFN0606-3 package with matching 45V VCEO and 100mA IC ratings. Verify thermal resistance and hFE ranges before substitution to ensure circuit stability.