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The BC847BLP4-7B is a single NPN small-signal transistor manufactured by Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device offers a power dissipation rating of 1000 mW when mounted on a large copper pad and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) minimum of 200 at 2 mA, a transition frequency (fT) of 100 MHz, and a collector-base breakdown voltage (BVCBO) of 50 V.
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel configuration as documented in the manufacturer's ordering information. Confirm that the X2-DFN1006-3 package dimensions align with your PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 handling procedures during assembly. Cross-reference the marking code 'F1' for proper component identification upon receipt.
Select this component when a low-profile surface-mount NPN transistor is required for high-density designs. The X2-DFN1006-3 package provides significantly smaller area compared to traditional SOT-23 packages. Consider the 1000 mW power dissipation capability if adequate thermal grounding via the exposed pad is implemented. Verify that the 45 V collector-emitter voltage meets the circuit's maximum operating requirements.
This part belongs to the BC847BLP4 series of general-purpose NPN transistors designed for surface-mount applications. It serves as the NPN counterpart to the complementary BC857BLP4 PNP transistor. The series is engineered to replace larger legacy packages while maintaining similar electrical performance profiles suitable for consumer and automotive electronics.
BC847BLP4Q is the automotive-compliant variant available under a separate datasheet. Direct pin-compatible replacements may exist in other DFN1006-3 packages, but verify absolute maximum ratings and thermal resistance values carefully.