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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A UDFN10063/SWP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：255 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-UFDFN
- Supplier Device Package：U-DFN1006-3/SWP (Type UX)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC847BLP4Q-7B is an NPN silicon general-purpose bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device utilizes an X1-DFN1006-3 package, providing a power dissipation capacity of 1 W. Its minimum DC current gain (hFE) is specified at 200 under standard test conditions. The component operates within a temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards for high-reliability applications
- Enhanced thermal performance enabled by the X1-DFN1006-3 surface-mount package design
- High DC current gain suitable for medium-power amplification and switching tasks
Applications
- Automotive electronic circuits requiring qualified components
- General-purpose signal amplification in consumer electronics
- Switching applications in industrial control systems
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the official Diodes Incorporated datasheet. Confirm the package designation matches the X1-DFN1006-3 footprint requirements for your PCB layout. Ensure the ordering information aligns with the manufacturer's latest product change notices to avoid discrepancies in electrical characteristics or packaging specifications.
Selection Notes
Select this component when automotive reliability certification is mandatory for the target application. The 1 W power dissipation capability distinguishes it from lower-power SOT-23 variants, making it suitable for higher-current switching loads. Verify that the DFN1006-3 package dimensions fit within the available board space constraints compared to traditional leaded packages.
Part Context
This part belongs to the BC847 series of NPN silicon transistors produced by Diodes Incorporated. The series offers various package options including SOT-23 and DFN formats. The BC847BLP4Q-7B specifically targets the automotive segment through its Q-suffix qualification, differentiating it from standard commercial grade versions while maintaining similar core electrical parameters like 45V breakdown voltage.
Replacement Considerations
Cross-reference with BC847BLP4-7B for non-automotive equivalents. Check Nexperia BC847LP4 variants for pin-compatible alternatives. Verify Diodes Incorporated internal cross-reference lists for direct replacements.
