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The BC847BLT1G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 200 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.6 V at IC = 100 mA and IB = 5.0 mA. The component operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-23 (TO-236) surface-mount package.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the requested part number matches the exact electrical grade required for the design. Ensure compliance with environmental directives such as RoHS if applicable to the target market. Cross-reference the manufacturer's discontinuation status before finalizing procurement plans.
Select this component when a low-voltage NPN transistor with high current gain is required for compact designs. The SOT-23 package facilitates automated surface-mount assembly. Consider the 45 V collector-emitter voltage limit and 100 mA current capability during circuit design. Verify thermal dissipation requirements relative to the PCB layout and ambient operating conditions.
This device belongs to the BC846ALT1G series, which includes various voltage and gain variants. The 'B' designation indicates a specific DC current gain binning level. The 'LT1' suffix typically denotes a tape and reel packaging format with a standard shipping quantity. This series provides standardized pinouts and mechanical dimensions for interchangeable use across different manufacturers.
BC847BLT3G
In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, devices with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
The total device dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature.