BC847BLT1

BC847BLT1

$0.04
  • Description:TRANS NPN 45V 0.1A SOT23-3
  • Series:-

SKU:e92c011f5550 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC847BLT1

Overview

The BC847BLT1G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 200 at IC = 2.0 mA and VCE = 5.0 V. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.6 V at IC = 100 mA and IB = 5.0 mA. The component operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-23 (TO-236) surface-mount package.

Feature Summary

  • NPN silicon construction designed for general-purpose switching and amplification applications
  • High DC current gain with a minimum specification of 200 under standard test conditions
  • Robust thermal performance supporting operation up to a junction temperature of 150°C
  • Compliant with RoHS standards and available in lead-free packaging

Applications

  • General-purpose signal amplification circuits
  • Electronic switching applications
  • Automotive electronics requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the requested part number matches the exact electrical grade required for the design. Ensure compliance with environmental directives such as RoHS if applicable to the target market. Cross-reference the manufacturer's discontinuation status before finalizing procurement plans.

Selection Notes

Select this component when a low-voltage NPN transistor with high current gain is required for compact designs. The SOT-23 package facilitates automated surface-mount assembly. Consider the 45 V collector-emitter voltage limit and 100 mA current capability during circuit design. Verify thermal dissipation requirements relative to the PCB layout and ambient operating conditions.

Part Context

This device belongs to the BC846ALT1G series, which includes various voltage and gain variants. The 'B' designation indicates a specific DC current gain binning level. The 'LT1' suffix typically denotes a tape and reel packaging format with a standard shipping quantity. This series provides standardized pinouts and mechanical dimensions for interchangeable use across different manufacturers.

Replacement Considerations

BC847BLT3G

FAQ

What is the pin configuration for the BC847BLT1G?

In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

Is the BC847BLT1G qualified for automotive applications?

Yes, devices with the S or NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

What is the maximum power dissipation of this transistor?

The total device dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature.

BC847BLT1BC847BLT1
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