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The onsemi BC847BLT1G is an NPN silicon general-purpose transistor housed in a SOT-23 (TO-236AB) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain of 200 at a collector current of 2.0 mA. Electrical characteristics include a collector-base breakdown voltage of 50 V, an emitter-base breakdown voltage of 6.0 V, and a transition frequency of 100 MHz. Thermal dissipation is rated at 225 mW on an FR-5 board.
Verify the specific ordering suffix to confirm the tape and reel quantity and ensure compliance with RoHS standards. Confirm that the AEC-Q101 qualification status aligns with automotive or high-reliability requirements if applicable. Check the marking code '1F' against the datasheet to validate the device revision and manufacturing origin before integration into production designs.
Select this component when a 45 V collector-emitter voltage rating is required rather than the higher ratings available in the BC846 series. The BC847B variant provides a guaranteed minimum hFE of 200, distinguishing it from lower gain options. Ensure the design accommodates the 225 mW thermal dissipation limit on standard PCB substrates.
This part belongs to the BC846ALT1G series of general-purpose NPN transistors manufactured by onsemi. The series includes variants with different voltage ratings such as BC846, BC847, and BC848. The BC847BLT1G specifically denotes the B binning for gain and the LT1G suffix indicating the SOT-23 package with lead-free composition and 3,000-unit tape and reel shipping configuration.
BC847ALT1G
In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable. Standard versions should be verified for specific site control requirements.
The maximum junction temperature range extends up to +150°C.