BC847BLT3

$0.04

Description：TRANS NPN 45V 0.1A SOT23-3
Series：-

SKU:2eb7127fccaf Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.1A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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BC847BLT3

Overview

The onsemi BC847BLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, packaged in a surface-mount SOT-23 (TO-236AB) configuration. It features a collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain of 200 at 2.0 mA and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a transition frequency of 100 MHz and low saturation voltages for efficient switching.

Feature Summary

NPN silicon construction designed for general-purpose amplification and switching applications
High DC current gain with specific B-grade binning for consistent performance
Robust electrostatic discharge protection exceeding 4000 V via Human Body Model
Compliant with RoHS standards and free from halogens and brominated flame retardants

Applications

General purpose signal amplification in portable equipment
Low-voltage switching circuits requiring high gain
Driver stages for logic interfaces and small-signal processing

Procurement Notes

Verify the complete part number includes the LT3G suffix to confirm the specific B-grade gain bin and 10,000-unit tape and reel packaging format. Confirm that the ordering code matches the official onsemi publication list to ensure correct marking codes and package dimensions. Cross-reference datasheet revision dates to validate thermal resistance values and maximum ratings against current manufacturing standards.

Selection Notes

Select this component when a moderate 45 V collector-emitter breakdown voltage is required alongside high current gain. The B-grade specification ensures a minimum hFE of 200, making it suitable for applications demanding reliable amplification without excessive base drive current. Consider the SOT-23 footprint for space-constrained designs where leaded alternatives are unsuitable.

Part Context

This device belongs to the BC846ALT1G series, which groups NPN transistors with varying voltage ratings. While sharing identical physical packages and thermal profiles, the BC847 variant specifically provides a 45 V VCEO rating, distinguishing it from the 65 V BC846 and 30 V BC848 models within the same family.