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The BC847BLT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It operates with a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous collector current of 100 mA and dissipates up to 225 mW at 25°C. It features a DC current gain (hFE) ranging from 200 to 450 at IC = 10 mA and VCE = 5 V. The component has a gain-bandwidth product of 100 MHz and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm that the device code matches the required electrical characteristics for the intended application. Ensure compliance with environmental standards if used in regulated markets.
Select this component when a 45 V NPN transistor with moderate gain is required. Compare hFE ranges against circuit requirements to ensure adequate amplification or switching capability. Verify thermal dissipation limits relative to the PCB layout and ambient operating conditions.
This part belongs to the BC846ALT1G series of general-purpose transistors. It shares the SOT-23 package style with other variants in the family but differs in voltage ratings and gain bins compared to BC846 or BC848 models.
BC847BLT1G
In the SOT-23 package, Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Standard versions are not explicitly listed as AEC-Q101 qualified; only devices with the 'S' or 'NSV' prefix are noted as automotive qualified and PPAP capable.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.