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The BC847BPDW1T2G is a dual general-purpose NPN/PNP bipolar junction transistor (BJT) manufactured by onsemi. It integrates complementary NPN and PNP transistors into a single SOT-363 (SC-88) surface-mount package, designed for low-power applications. The device features a maximum collector current of 100 mA per transistor and a collector-emitter voltage rating of 45 V. Key electrical parameters include a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 100 MHz. The component operates within a temperature range of -55°C to +150°C and is RoHS compliant.
Verify the specific suffix 'T2G' against official onsemi documentation to confirm tape and reel specifications, as standard variants often use 'T1'. Ensure the source document explicitly lists this part number to avoid substitution errors with similar dual transistor packages like SC-88 or SOT-363 alternatives.
Select this component when space-constrained designs require matched NPN/PNP pairs. Verify that the 100 mA current limit and 45 V voltage rating meet circuit demands. Confirm package compatibility with PCB footprint standards for SOT-363/SC-88 before finalizing the design.
This part belongs to the BC847 series of small-signal transistors. It serves as a dual-transistor alternative to single BJT packages, reducing board space and assembly steps. The 'B' designation typically indicates a specific DC current gain binning range, ensuring consistent performance across production batches.
Compatible substitutes include BC847BPDW1T1G and BC847BPDW1 from onsemi, provided the packaging format matches. Other manufacturers offering SOT-363 dual NPN/PNP transistors with identical pinouts and electrical ratings may also serve as functional replacements.