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The BC847BQB-QZ is an NPN general-purpose silicon bipolar junction transistor manufactured by Nexperia. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device is housed in a compact SOT-323 (SC-70) surface-mount package, designed for low power dissipation applications. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, ensuring high amplification capability. The component operates within a temperature range of -55 °C to +150 °C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix QZ against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides valid traceability records required for automotive-grade components. Cross-reference the full part number with the manufacturer's latest longevity program data to confirm availability status before finalizing orders.
Select this component when automotive qualification is mandatory for NPN switching or amplification tasks requiring small form factors. Compare the SOT-323 package constraints against available board space. Evaluate the hFE B-group gain band against circuit requirements to ensure sufficient drive capability without excessive base current consumption.
This part belongs to the BC847 series of general-purpose NPN transistors from Nexperia. The series offers multiple gain selections (A, B, C groups) and various package options including SOT-23 and SOT-323. The BC847B variant specifically targets applications needing higher current gain than the standard A-group devices.
Direct substitutes include other AEC-Q101 qualified NPN transistors in SOT-323 packages with matching 45V/100mA ratings. Verify pinout compatibility and thermal resistance values when replacing with equivalent parts from other manufacturers.