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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SOT-363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BC847BS_R1_00001 is a dual NPN bipolar junction transistor array manufactured by Panjit International Inc. It utilizes SOT-363 surface-mount packaging and supports a maximum collector-emitter voltage of 45V with a continuous collector current of 100mA. The device features a power dissipation rating of 300mW, a transition frequency of 100MHz, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual NPN configuration in a compact SOT-363 package
- High-speed switching capability with 100MHz transition frequency
- Low power consumption suitable for portable applications
Applications
- General-purpose signal amplification
- Switching circuits in consumer electronics
- Driver stages for low-power loads
Procurement Notes
Verify the specific suffix R1_00001 against official Panjit documentation to confirm tape-and-reel specifications and RoHS compliance status. Ensure the SOT-363 footprint matches the target PCB design. Cross-reference datasheet revisions to confirm thermal characteristics and electrical limits remain consistent with the intended application requirements before finalizing procurement.
Selection Notes
Select this component when a dual NPN topology is required in a minimal footprint. The 45V rating and 100mA current capacity suit low-voltage logic interfacing. Consider the 300mW power dissipation limit for thermal management. This part serves as a direct functional replacement for standard BC847B dual arrays in space-constrained designs requiring complementary or matched NPN pairs.
Part Context
This part belongs to Panjit's BC847 series of general-purpose small-signal transistors. The BS variant specifically denotes a dual NPN configuration housed in the SOT-363 package. It complements other parts in the family like BC847BPN, offering a standardized solution for mass-produced electronic devices requiring reliable switching performance.
Replacement Considerations
BC847BPN_R2_00001
FAQ
What is the maximum collector-emitter voltage for this dual NPN array?
The maximum DC collector-emitter voltage (VCEO) is 45V.
Does this component contain both NPN and PNP transistors?
No, the BC847BS designation indicates a dual NPN configuration, whereas BC847BPN would indicate complementary NPN/PNP.
