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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：SOT-523
- Grade：-
- Qualification：-
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Overview
The BC847BT-7-F is an NPN small signal transistor manufactured by Diodes Incorporated, housed in a SOT523 surface-mount package. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA. The device utilizes epitaxial planar die construction and offers a DC current gain (hFE) range of 200 to 450 at VCE=5V and IC=2mA. Key electrical parameters include a collector-base breakdown voltage of 50V, emitter-base breakdown voltage of 6V, and a transition frequency of 100MHz. Power dissipation is rated at 150mW with a thermal resistance of 833°C/W.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Ultra-small SOT523 surface-mount package design
- Fully lead-free and RoHS compliant manufacturing
- Halogen and antimony free green device
Applications
- General purpose amplification
- Switching applications
- RF amplifier circuits
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and marking codes. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements relevant to your region. Confirm that the SOT523 package dimensions match your PCB footprint specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN transistor with moderate gain and low power dissipation is required. The BC847BT variant provides a specific hFE binning range suitable for consistent amplification characteristics. Consider the complementary PNP type MMBT3906T if push-pull configurations are needed within the same package family.
Part Context
This part belongs to the BC847AT, BT, CT series of 45V NPN small signal transistors. It is designed as a complement to the BC857x series of PNP transistors. The BC847BT specifically denotes the middle gain bin within the product line, offering distinct electrical characteristics compared to the AT and CT variants.
Replacement Considerations
MMBT3904T
FAQ
What is the maximum operating temperature for the BC847BT-7-F?
The junction temperature range is -55°C to +150°C.
Is the BC847BT-7-F qualified for automotive applications?
No, the standard BC847BT-7-F is not automotive qualified. An automotive-compliant version, BC847BTQ, is available under a separate datasheet.
What is the ESD protection rating for this device?
The device has an ESD HBM rating of 4,000V (JEDEC Class 3A) and an MM rating of 400V (Class C).
