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The BC847BV-7 is an NPN dual small signal surface mount transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA. The device has a power dissipation rating of 150mW at 25°C ambient temperature, with a thermal resistance of 833°C/W. The DC current gain (hFE) ranges from 200 to 450 at IC=2.0mA and VCE=5.0V. The transition frequency (fT) is specified at 100MHz under standard test conditions. Operating and storage temperatures span from -55°C to +150°C.
Verify the specific ordering suffix and packaging quantity against official Diodes Incorporated documentation before procurement. Confirm that the component meets required RoHS compliance standards and moisture sensitivity level 1 requirements for your assembly process. Ensure compatibility with suggested pad layout AP02001 for optimal thermal and electrical performance during soldering.
Select this component when a matched pair of NPN transistors in a compact SOT-563 package is required. Consider the 150mW power dissipation limit and 833°C/W thermal resistance for thermal management. Verify that the 45V VCEO and 100mA IC ratings suit the circuit demands. Check if the 100MHz fT meets frequency requirements for the intended application.
This part belongs to the BC847 series of dual NPN transistors. It serves as the NPN counterpart to the BC857BV PNP dual transistor. The 'BC847' prefix indicates the general purpose classification, while 'BV' denotes the specific hFE binning range. The '-7' suffix typically indicates tape and reel packaging.
Direct pin-compatible replacements include BC847BV from other manufacturers such as Nexperia or Micro Commercial Components. Verify electrical parameters like hFE range and VCEO match before substitution.