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The BC847BVN-7 is a complementary pair small-signal transistor manufactured by Diodes Incorporated, featuring one NPN (BC847B) and one PNP (BC857B) transistor within an SOT563 package. The NPN device supports a collector current of 100 mA with a collector-emitter breakdown voltage of 45 V and a transition frequency up to 300 MHz. The PNP device provides a collector current of -100 mA, a collector-emitter breakdown voltage of -45 V, and a transition frequency up to 200 MHz. Both transistors share a total power dissipation rating of 150 mW at +25°C.
Verify the ordering suffix '-7' corresponds to the standard reel packing configuration. Confirm that the specific revision of the datasheet matches the production batch requirements. Ensure compliance with RoHS 3 directives if required by the target market regulations. Check for any automotive-grade variants if higher reliability standards are necessary for the application.
Select this component when a compact dual-transistor solution is needed for signal processing or switching tasks. The SOT563 package offers space savings compared to discrete components. Consider the thermal resistance of 833 °C/W and ensure adequate PCB copper area for heat dissipation during continuous operation.
This part belongs to the BC847 series of general-purpose bipolar junction transistors. It is designed as a complementary pair, often used where space constraints prevent the use of separate NPN and PNP devices. The BC847BVN-7 is specifically optimized for surface-mount assembly processes.
Check for equivalent parts from other manufacturers offering the same pinout and electrical characteristics in the SOT563 package. Verify that any substitute meets the same voltage, current, and thermal ratings.