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The BC847BW-QX is an NPN general-purpose bipolar junction transistor manufactured by Nexperia. It operates in a SOT-323 (SC-70) surface-mount package with three leads. Key electrical ratings include a maximum collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 6 V. The device supports a continuous DC collector current of 100 mA and a peak current of 200 mA. Power dissipation is rated at 200 mW. The gain-bandwidth product is 100 MHz. Current gain ranges from 200 to 450 at 2 mA and 5 V. It functions within a temperature range of -65°C to +150°C and holds AEC-Q101 qualification.
Verify the specific suffix 'QX' against official Nexperia documentation to confirm packaging details and reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Select this component when a high-voltage NPN transistor is required in a compact SC-70 footprint. The 65 V rating exceeds standard 45 V variants, offering higher headroom. Verify that the 200 mW power dissipation limit suits the thermal design constraints of the target application environment.
This part belongs to the Nexperia BC847 family of NPN transistors. While standard BC847 variants typically feature 45 V ratings, the BC847B variant provides enhanced voltage capabilities up to 65 V. The Q-series designation indicates compliance with automotive quality standards, distinguishing it from standard commercial grade devices.
BC847B-QR (SOT-23 package)
The maximum collector-emitter voltage (VCEO) is 65 V.
Yes, it is qualified according to the AEC-Q101 standard.
The DC current gain (hFE) ranges from 200 to 450 at a collector current of 2 mA and VCE of 5 V.