BC847BWE6433HTMA1

Description：TRANS NPN 45V 0.1A PG-SOT323
Series：-

SKU:e3361daf2f33 Category: Single Bipolar Transistors Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.1A PG-SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323
Grade：-
Qualification：-

Download product information

BC847BWE6433HTMA1

Overview

The BC847BWE6433HTMA1 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and configured as a single transistor. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 45 V, and a collector-base voltage (VCBO) of 50 V. The device features an emitter-base voltage (VEBO) of 6 V, a collector-emitter saturation voltage of 200 mV, and a power dissipation (Pd) of 330 mW. Its gain-bandwidth product (fT) is 250 MHz, with a DC current gain (hFE) ranging from 200 to 450. It operates within a temperature range of -65 °C to +150 °C and holds AEC-Q100 qualification.

Feature Summary

Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in demanding environments.
High thermal stability enabling operation at junction temperatures up to +150 °C.
Compact SOT-23-3 surface-mount packaging designed for efficient space utilization in dense circuit layouts.

Applications

General-purpose switching applications in automotive electronics
Signal amplification in consumer electronic devices
Interface circuits requiring small form-factor transistors

Procurement Notes

Verify the specific suffix HTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the AEC-Q100 qualification status remains active, as lifecycle notices may indicate obsolescence or production changes. Ensure compatibility with required hFE binning ranges for your specific design constraints before finalizing procurement.

Selection Notes

Select this component when an NPN BJT with 45 V VCEO and 100 mA IC capability is required in an SOT-23-3 package. The AEC-Q100 qualification makes it suitable for automotive designs. Consider the 250 MHz fT and 330 mW power dissipation limits for high-frequency or power-sensitive applications. Verify that the 200-450 hFE range meets the biasing requirements of the target circuit.

Part Context

This part belongs to the BC847 series of NPN silicon transistors from Infineon. The series is widely used for general-purpose amplification and switching. The BC847B variant specifically denotes a particular DC current gain (hFE) binning range, distinguishing it from other variants like BC847A or BC847C which have different gain specifications.

Replacement Considerations

Cross-reference with other BC847B variants such as BC847BTA or BC847BSE if pinout and electrical characteristics match. Verify package compatibility (SOT-23-3) and ensure equivalent AEC-Q100 qualification if automotive reliability is required.