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The BC847C-13-F is an NPN small-signal transistor manufactured by Diodes Incorporated, housed in a SOT23 surface-mount package. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device provides a DC current gain (hFE) ranging from 420 to 800 at IC = 2.0 mA and VCE = 5 V. Electrical characteristics include a transition frequency of up to 300 MHz and a maximum power dissipation of 350 mW under specific thermal conditions.
Verify the ordering suffix matches the required reel size and packing quantity. Confirm that the component meets specific environmental standards such as RoHS 3 compliance if mandated by the design requirements. Ensure the supplier source aligns with authorized distribution channels to guarantee product authenticity and traceability.
Select this component when high DC current gain is required for low-level signal amplification. The SOT23 package offers a compact footprint suitable for space-constrained designs. Consider the 45 V collector-emitter voltage rating to ensure adequate headroom for the intended operating voltage levels within the circuit topology.
This part belongs to the BC846A–BC848C series of NPN small-signal transistors. The 'C' suffix indicates the highest binning category for DC current gain within the series. Complementary PNP types are available in the BC856A–BC858C series for push-pull configurations.
Direct replacements must match the SOT23 package and electrical ratings. Verify compatibility with complementary PNP devices if used in pairs. Automotive-grade alternatives exist under the separate BC846AQ–BC848CQ datasheet for qualified automotive environments.