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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-23
- Series：BC84
- Mfr：MDD
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：0.1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The MDD BC847C is a single NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It utilizes an epitaxial silicon planar structure housed in a surface-mount SOT-23 package. Key electrical specifications include a collector-emitter breakdown voltage of 45V, a maximum continuous collector current of 100mA, and a power dissipation rating of 200mW. The device features a transition frequency of 100MHz and a DC current gain (hFE) ranging from 420 to 800 at 2mA and 5V. It operates within a temperature range of -65°C to +150°C.
Feature Summary
- NPN epitaxial silicon planar design for reliable signal processing
- High DC current gain suitable for sensitive amplification circuits
- Compact SOT-23 surface-mount footprint for space-constrained layouts
Applications
- Communication modules
- Industrial control systems
- Consumer electronics devices
Procurement Notes
Verify the specific manufacturer designation as MDD or Microdiode Electronics when sourcing. Confirm RoHS compliance status through official documentation. Ensure the SOT-23 package dimensions match your PCB footprint requirements. Check for AEC-Q101 automotive qualification if used in vehicle applications, as standard versions may lack this certification.
Selection Notes
Select this component for low-power analog signal conditioning where moderate gain is required. Compare hFE ranges against circuit sensitivity needs. Consider thermal management capabilities given the 200mW dissipation limit in small packages. Evaluate alternative voltage ratings if higher breakdown protection is necessary for the target application environment.
Part Context
This part belongs to the widely adopted BC847 series of small-signal transistors. It serves as a common replacement for legacy components in consumer and industrial equipment. The SOT-23 form factor allows for automated assembly and high-density board designs. It represents a standard solution for basic switching and linear amplification tasks.
Replacement Considerations
- BC847B-AQ
- BC847A
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter breakdown voltage (Vceo) is 45V.
What is the DC current gain range?
The DC current gain (hFE) typically ranges from 420 to 800 under specified test conditions.
Is the device lead-free?
Yes, the component is certified as lead-free and RoHS compliant.
