BC847C,215

$0.11

Description：TRANS NPN 45V 0.1A TO-236AB
Series：-

SKU:99f050c4b5c7 Category: Single Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.1A TO-236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：TO-236AB
Grade：-
Qualification：-

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BC847C,215

Overview

The BC847C,215 is a single NPN general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 6 V. The device supports a maximum continuous DC collector current of 100 mA with a total power dissipation of 250 mW. It features a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 200 mV. Operating temperatures range from -65°C to +150°C.

Feature Summary

High DC current gain for efficient signal amplification
Low collector-emitter saturation voltage for reduced power loss
Small SOT-23 surface-mount footprint for space-constrained designs

Applications

General-purpose switching circuits
Amplifier stages
Driver applications

Procurement Notes

Verify the complete part number including the suffix against official Nexperia documentation to ensure correct gain binning and packaging configuration. Confirm RoHS compliance status through the manufacturer's datasheet. Cross-reference the ordering code with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-power switching or linear amplification tasks. Ensure the design accounts for the 250 mW power dissipation limit and the specific hFE characteristics defined in the datasheet. Verify that the SOT-23 package dimensions fit the PCB layout constraints.

Part Context

This component belongs to the BC847 series of general-purpose NPN transistors produced by Nexperia. The series offers various gain selections to accommodate different circuit requirements. The BC847C variant specifically provides a higher minimum current gain compared to other selection groups within the same family.