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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC847CE6433HTMA1 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and is qualified to AEC-Q100 standards for automotive reliability. The device supports a maximum continuous collector current of 100 mA with a collector-emitter voltage rating of 45 V. Key electrical characteristics include a DC current gain (hFE) range of 200 to 450, a transition frequency (fT) of 250 MHz, and a power dissipation capacity of 330 mW. It operates within a temperature range of -65°C to +150°C.
Feature Summary
- Automotive-grade qualification ensuring high reliability under demanding environmental conditions
- High DC current gain providing efficient signal amplification capabilities
- Wide operating temperature range suitable for extreme thermal environments
Applications
- General-purpose switching applications in automotive electronics
- Small-signal amplification in consumer electronic circuits
- Driver stages for low-power analog signal processing
Procurement Notes
Verify the specific suffix 'C' against official Infineon documentation to confirm the exact hFE binning requirements for your design. Confirm that the AEC-Q100 qualification aligns with your target application's reliability standards. Ensure the SOT-23-3 package dimensions match your PCB footprint constraints before finalizing procurement.
Selection Notes
Select this component when a standard NPN BJT with automotive certification is required. The BC847 series offers a balance of moderate current handling and high gain. Consider the specific hFE binning associated with the 'C' suffix to ensure consistent performance across production batches compared to other variants in the family.
Part Context
This part belongs to the BC847 series of NPN silicon transistors from Infineon. The series is widely used for general-purpose amplification and switching. The BC847CE6433HTMA1 variant specifically denotes the C gain bin and HTMA1 packaging configuration, distinguishing it from other gain ranges or tape-and-reel options within the same product family.
Replacement Considerations
Check for direct cross-reference parts such as BC847C from other manufacturers like ON Semiconductor or STMicroelectronics. Verify that any substitute matches the SOT-23-3 package, 45V VCEO rating, and 100mA Ic limit. Ensure the replacement also meets AEC-Q100 if automotive use is intended.
