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The BC847CHZGT116 is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 45V and a continuous collector current of 100mA. The device features a DC current gain (hFE) ranging from 420 to 800 at 2mA and 5V. It has a power dissipation rating of 350mW and a transition frequency of 200MHz. Qualified under AEC-Q101 standards, it supports surface mount installation in an SOT-23 package.
Verify the specific suffix GT116 against the official ROHM datasheet to confirm reel packaging and tape specifications. Ensure the component matches the AEC-Q101 qualification requirements for your target application. Cross-reference the hFE binning range (420 to 800) with your circuit design constraints before finalizing procurement orders.
Select this component when high current gain is required for NPN amplification in space-constrained designs. The SOT-23 package offers a compact footprint compared to larger through-hole alternatives. Consider the 45V breakdown voltage limit and 100mA current capacity to ensure operation remains within safe limits for your specific load requirements.
This part belongs to the BC847 series of general-purpose NPN transistors produced by ROHM. It serves as the high-gain variant within the family, complementing lower gain versions like the BC847B. The HZG suffix indicates automotive-grade processing and packaging, distinguishing it from standard commercial grade equivalents in the same physical form factor.
The BC847BU3HZG is listed as a complementary product in the same series. Verify pinout compatibility and electrical parameter overlaps before substituting. Check if the alternative package type meets your board layout constraints.