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The BC847CMTF is an NPN epitaxial silicon transistor from the BC847 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device utilizes a SOT-23 surface-mount package with three leads. Electrical characteristics include a DC current gain (hFE) range of 420 to 800 at IC = 2 mA and VCE = 5 V. The current gain bandwidth product (fT) is specified at 300 MHz under standard test conditions.
Verify the specific ordering suffixes when sourcing components. The 'M' designation indicates the SOT-23 package configuration, while 'TF' specifies tape and reel packing methods. Confirm that the hFE classification matches the required 'C' binning specifications for the intended application design parameters.
Select this component based on the required NPN polarity and the specific hFE gain banding. The 'C' suffix denotes a high-gain selection range suitable for sensitive amplification tasks. Ensure the thermal resistance and power dissipation limits align with the PCB layout and ambient operating temperature constraints of the target system.
This part belongs to the BC846/BC847/BC848/BC850 family of NPN epitaxial silicon transistors produced by onsemi. The BC847 variant specifically offers a 45 V collector-emitter rating, distinguishing it from the higher-voltage BC846 and lower-voltage BC848 models within the same series lineup.
Compatible substitutes include BC847BMTF and BC847AMTF from the same manufacturer, provided the hFE gain requirements are met. Other manufacturers producing JEDEC-standard BC847C devices in SOT-23 packages may also serve as functional equivalents.