BC847CQB-QZ

Overview

The BC847CQB-QZ is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a DFN1110D-3 (SOT8015) surface-mount package. The device supports a maximum DC collector current of 200 mA and features a collector-emitter voltage rating of 45 V, with a collector-base voltage of 50 V and an emitter-base voltage of 6 V. Key electrical characteristics include a collector-emitter saturation voltage of 400 mV.

Feature Summary

• Single NPN configuration for discrete switching applications
• DFN1110D-3 leadless plastic package for compact board layouts
• Silicon-based construction for general-purpose signal processing

Applications

• General-purpose switching circuits
• Signal amplification stages
• Low-voltage logic interfacing

Procurement Notes

Verify the specific suffix QZ against official Nexperia documentation to confirm the exact tape-and-reel packaging format and lot traceability requirements. Ensure the DFN1110D-3 footprint matches your PCB design constraints before finalizing procurement orders.

Selection Notes

Select this component when a small form factor is required alongside higher current handling capabilities compared to standard SOT-23 variants. The DFN1110D-3 package offers improved thermal performance relative to its size, making it suitable for dense consumer electronics designs requiring reliable NPN switching.

Part Context

This part belongs to the BC847 series of general-purpose NPN transistors produced by Nexperia. While many series members utilize the traditional SOT-23 package, the BC847CQB-QZ specifically employs the advanced DFN1110D-3 leadless package to meet modern space-saving demands in portable devices.

Replacement Considerations

Direct replacements must match the NPN polarity, 45V Vceo rating, and DFN1110D-3 package dimensions. Verify that alternative components maintain comparable hFE gain ranges and saturation voltages to ensure circuit performance parity.