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The BC847CW/DG/B2,115 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device utilizes the SOT-323 (SC-70) surface-mount package. It features a DC current gain (hFE) selection group 'C', providing a minimum gain of 420 at 2 mA and 5 V. The transition frequency is rated at 100 MHz, and the maximum power dissipation is 200 mW. The operating junction temperature range extends from -55 °C to 150 °C.
Verify the specific suffix DG/B2 against official Nexperia documentation to confirm the exact gain binning and marking code. Ensure the ordering part number matches the required selection group for the intended circuit design. Confirm package type and compliance status through the manufacturer's datasheet before procurement.
Select this component when a high-gain NPN transistor is required in a small footprint. The 'C' gain bin ensures consistent performance for amplification tasks. Compare electrical characteristics such as saturation voltage and transition frequency against alternative packages like SOT-23 if board space allows for larger components.
This part belongs to the BC847 series of NPN general-purpose transistors. It serves as a complement to the PNP BC857 series. The SOT-323 package offers a smaller profile compared to the standard SOT-23, making it suitable for dense PCB layouts. It is widely used in consumer electronics and portable devices.
BC847CW,115
The suffix B2 indicates the 'C' selection group, which provides a minimum hFE of 420 at 2 mA and 5 V.
The maximum power dissipation is 200 mW.