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The BC847CW/DG/B4X is a single NPN bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous DC collector current of 100 mA and features a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. Power dissipation is rated at 200 mW, with a transition frequency of 100 MHz. It utilizes the SOT-323 surface-mount package, measuring 2.2 mm in length and 1.1 mm in height. The component functions within a temperature range of -55°C to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm exact gain binning and packaging configuration. Ensure the selected variant matches the required hFE range for the target application. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when high current gain is required for low-current amplification tasks. The SOT-323 package suits space-constrained designs. Compare the 420 hFE minimum against other series like BC847A or BC847B if lower gain thresholds are acceptable for cost optimization.
This part belongs to the BC847 family of general-purpose NPN transistors from Nexperia. The family includes variants with different gain selections (A, B, C) and complementary PNP types (BC857). These devices are standard components for discrete logic and analog signal conditioning in portable and industrial equipment.
Direct substitutes include BC847AW,115 and BC847CW from Diotec Semiconductor. Verify pinout compatibility and thermal characteristics when replacing with equivalent parts from other manufacturers.