SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847CWE6433HTMA1 is an NPN silicon general-purpose bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323 (SC-70) package with three terminals. The device supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage of 45 V. Key electrical characteristics include a collector-base voltage rating of 50 V, an emitter-base voltage limit of 6 V, and a transition frequency of 250 MHz. Power dissipation is rated at 330 mW, with a DC current gain range typically between 200 and 450.
Verify the specific suffix 'WE' against official Infineon documentation to confirm binning or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material content sheet. Ensure the component meets AEC-Q100 automotive qualification requirements if intended for automotive-grade designs.
Select this component when a small-form-factor NPN transistor is required for low-voltage switching or amplification. Compare the 45 V collector-emitter voltage and 100 mA current limits against circuit demands. Consider the SOT-323 footprint constraints during layout design.
This part belongs to the BC847 series of NPN transistors from Infineon. The series is widely recognized for general-purpose use in consumer electronics and industrial control systems. The WE suffix indicates specific manufacturing lot or packaging attributes defined by Infineon.
Consult official cross-reference lists for direct substitutes such as the BC847BWE variant. Verify pinout compatibility and electrical parameter overlaps before substituting.