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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A PG-SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
- Grade：-
- Qualification：-
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Overview
The BC847CWH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SOT-323-3 package. The device features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. Key electrical parameters include a DC current gain (hFE) ranging from 420 to 800, a collector-emitter saturation voltage of 200 mV, and a power dissipation capacity of 330 mW. It operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- High DC current gain for sensitive signal amplification
- Compact SOT-323-3 surface-mount packaging for space-constrained designs
- Wide operating temperature range ensuring reliability in extreme conditions
Applications
- General-purpose switching applications
- Small-signal amplification circuits
- Low-power control logic interfaces
Procurement Notes
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact pinout and electrical tolerances required for your design. Cross-reference with authorized distributors to confirm current availability and authenticity before finalizing procurement plans.
Selection Notes
Select this component when high current gain is required in a minimal footprint. The SOT-323-3 package suits automated surface-mount assembly processes. Consider the 30 V voltage limit and 100 mA current capability during circuit design to ensure operation within safe limits. Verify thermal management requirements given the 330 mW power dissipation rating in enclosed environments.
Part Context
This part belongs to the BC847 series of small-signal NPN transistors. These devices are widely used in consumer electronics and industrial equipment for low-power switching and amplification tasks. The BC847C variant specifically denotes a binning category for higher current gain compared to standard variants, offering improved performance in high-impedance input stages.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements may differ in hFE binning or package tolerance. Do not assume pin compatibility without verifying datasheet specifications for alternative manufacturers.
