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The BC847CWH6778XTSA1 is a dual NPN bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-363 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device offers a DC current gain range of 200 to 450 and a transition frequency of 250 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning from -65 °C to +150 °C.
Verify the specific suffix against official Infineon documentation to confirm exact binning and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure the component matches the required automotive grade standards if utilized in vehicle systems.
Select this component when a dual NPN BJT with high gain and automotive qualification is required. Compare the 45 V rating and 250 MHz bandwidth against circuit requirements. Consider the SOT-363 package dimensions for PCB layout constraints relative to alternative single-transistor solutions.
This part belongs to the BC847 series of small-signal transistors. It shares the family's general characteristics while offering specific gain binning and packaging options tailored for automated assembly processes. The dual configuration allows for cost-effective implementation of differential pairs or logic gates.
Consult official cross-reference lists for verified substitutes. Generic equivalents may lack the specific automotive qualification or precise gain binning required for critical applications.