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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The onsemi BC847CWT3G is a single NPN silicon general-purpose transistor housed in the SC-70 (SOT-323) surface-mount package. It features a maximum collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW at 25°C ambient temperature. The device offers a DC current gain range of 420 to 800 at 2.0 mA and a transition frequency of 100 MHz. It operates within a junction and storage temperature range of -55°C to +150°C.
Feature Summary
- Designed for low-power surface mount applications using the compact SC-70/SOT-323 housing.
- Qualified for automotive and other applications requiring unique site and control change requirements under AEC-Q101 standards.
- Manufactured as a Pb-free, Halogen-free/BFR-free, and RoHS compliant component.
Applications
- General purpose amplifier circuits
- Low power switching applications
Procurement Notes
Verify the specific ordering suffix 'T3G' against official documentation to confirm the 10,000-unit tape and reel shipping configuration. Ensure that the 'S' or 'NSV' prefix requirements are met if the application demands AEC-Q101 qualification and PPAP capability, as these prefixes denote specific manufacturing sites and control changes.
Selection Notes
Select this component when a high-gain NPN transistor is required in a small SC-70 footprint. The BC847C variant provides a minimum hFE of 420, suitable for sensitive signal amplification. Confirm that the 45 V collector-emitter voltage and 100 mA current limits align with the circuit design constraints before implementation.
Part Context
This part belongs to the BC846, BC847, and BC848 series of general-purpose NPN silicon transistors. The 'C' suffix indicates a specific DC current gain binning range (420-800), distinguishing it from the lower gain 'A' and 'B' variants within the same family. These devices share identical pinouts and physical dimensions but differ in electrical performance characteristics.
Replacement Considerations
Compatible substitutes include BC847CWT1G (3,000 units/reel) and NSVBC847CWT1G (automotive qualified). Cross-manufacturer equivalents such as Nexperia BC847CW or LRC LBC847C may be considered after verifying parameter alignment.
FAQ
What is the marking code for the BC847CWT3G?
The device-specific marking code is '1G', followed by the month code and date code.
Does this component meet automotive qualification standards?
Yes, parts with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable.
What is the thermal resistance of the SC-70 package?
The junction-to-ambient thermal resistance is 620 °C/W when mounted on an FR-5 board at 25°C.
