SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC847PN-7R-F is a dual bipolar junction transistor (BJT) manufactured by Diodes Incorporated, housed in an SOT-363-6 surface-mount package. It integrates two internally isolated transistors: one NPN and one PNP. The device supports a maximum continuous collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The emitter-base breakdown voltage (VEBO) is rated at 6 V. Electrical characteristics include a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 300 MHz. Power dissipation is limited to 200 mW, with an operating temperature range spanning from -65°C to +150°C.
Verify the specific suffix against official Diodes Incorporated documentation to confirm tape-and-reel configuration details. Ensure compatibility with automated pick-and-place equipment specifications for the SOT-363 form factor. Cross-reference manufacturing dates and lot codes to meet project reliability standards.
Select this component when space-constrained designs require both NPN and PNP functions in a single footprint. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal management constraints due to the 200 mW power dissipation limit in small packages.
This part belongs to the BC847P series of small-signal transistors. It serves as a complementary pair solution, often replacing discrete dual-transistor setups. The product line emphasizes lead-free compliance and halogen-free materials for environmental safety.
Check for direct equivalents such as the BC847PNQ-7-F variant if automotive qualification (AEC-Q101) is required. Verify pinout compatibility before substituting with other SOT-363 dual BJT packages from different manufacturers.