BC847QAPNZ

Overview

The Nexperia BC847QAPNZ is a dual general-purpose transistor featuring one NPN and one PNP element housed in a DFN1010B-6 (SOT1216) leadless surface-mount package. It operates with a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device exhibits a transition frequency of 100 MHz and a DC current gain (hFE) ranging from 200 to 450 at 2 mA. Power dissipation is rated at 350 mW, with a maximum junction temperature of +150°C. The component is qualified under AEC-Q101 standards for automotive reliability.

Feature Summary

• Automotive-grade qualification compliant with AEC-Q101 standards
• Ultra-small leadless DFN1010B-6 package design for space-constrained applications
• Integrated NPN and PNP configurations within a single compact footprint

Applications

• General-purpose switching circuits
• Signal amplification stages
• Automotive electronic control modules

Procurement Notes

Verify the specific suffix 'NZ' against official Nexperia documentation to confirm packaging details and marking codes. Ensure the selected variant matches the required hFE binning and thermal specifications for the target application environment.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. Consider the 45V rating and 100mA current limit for low-power signal processing tasks. Verify thermal management requirements given the small package size and 350mW power dissipation capability.

Part Context

This part belongs to the BC847-Q series of automotive-qualified general-purpose transistors. It serves as a dual-transistor alternative to single BJT packages, reducing component count in designs requiring complementary switching or amplification functions.

Replacement Considerations

Direct substitutes include BCM847QAS for matched NPN/NPN pairs or standard BC847 variants if single polarity is sufficient. Verify pinout compatibility and electrical parameters before substitution.