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Product Detailed Parameters
- Description：TRANS 2NPN 45V 0.1A PG-SOT363-PO
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BC847SE6433BTMA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363-6 package and utilizes silicon technology. The device features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. Electrical performance specifications list a minimum DC current gain (hFE) of 200 and a maximum of 450, with a transition frequency (fT) of 250 MHz. Power dissipation is rated at 250 mW, and the component operates within a temperature range of -65°C to +150°C.
Feature Summary
- Dual NPN configuration integrated into a compact SMD package for space-constrained designs
- High DC current gain ranging from 200 to 450 for effective signal amplification
- AEC-Q100 qualification ensuring reliability for automotive electronic applications
Applications
- Automotive electronics systems requiring qualified discrete components
- General-purpose switching circuits in consumer electronics
- Signal amplification stages in low-power analog applications
Procurement Notes
Verify the specific suffix 'B' against official Infineon documentation to confirm binning or gain classification requirements. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Ensure the SOT-363-6 footprint matches the target PCB layout constraints. Validate that the AEC-Q100 qualification meets the specific automotive grade standards required for the end application.
Selection Notes
Select this component when a dual NPN topology is required in a minimal footprint. The 45 V rating suits general low-voltage switching tasks. Verify that the 250 mW power dissipation limit accommodates the thermal design of the host system. Compare the hFE range against circuit biasing requirements to ensure adequate gain margins are maintained across the operating temperature range.
Part Context
This part belongs to the BC847 series of small-signal transistors produced by Infineon Technologies. The 'S' designation indicates the dual NPN configuration, while the '6433' suffix typically relates to specific manufacturing lot or binning codes. The 'XTMA1' suffix denotes the standard tape and reel packaging format used for automated surface-mount assembly processes.
Replacement Considerations
- BC847SH6433XTMA1
FAQ
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter voltage (VCEO) is 45 V.
Is this transistor qualified for automotive applications?
Yes, the component holds AEC-Q100 qualification.
What is the transition frequency of the BC847SE6433BTMA1?
The transition frequency (fT) is specified as 250 MHz.
