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The BC847SH6359XTMA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It is housed in a SOT-363 (SC-88) surface-mount package and configured as a dual transistor with two internally isolated elements. The device supports a maximum DC collector current of 200 mA and features a collector-emitter voltage rating of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 6 V, and a transition frequency of 250 MHz. Power dissipation is rated at 250 mW, with an operating temperature range from -65 °C to +150 °C.
Verify the specific suffix 'H6359' against official Infineon documentation to confirm tape-and-reel specifications and binning details. Ensure compatibility with existing PCB footprints for the SOT-363 package. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a minimal footprint. The 45 V rating and 200 mA current capacity suit low-power signal processing tasks. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability. Compare thermal resistance values against system constraints to ensure adequate heat dissipation within the small outline package.
This part belongs to the BC847 series of small-signal transistors, which are widely used in consumer and industrial electronics. The 'S' designation typically indicates a dual transistor variant, while the 'H6359' suffix specifies the packaging format. This series is known for its high gain and low saturation voltage, making it a standard choice for general-purpose amplification and switching circuits.
Potential substitutes include the BC847SH6433XTMA1 or generic equivalents like the 2N7002 family if pinout compatibility allows. Verify that replacement parts match the SOT-363 package dimensions and maintain equivalent electrical ratings for VCEO, IC, and hFE bins to ensure circuit performance consistency.